Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K

Surface Science

Volumn 559, Issue 1, 2004, Pages 1-15

  Takagi, Yasumasa ^a   Yoshimoto, Yoshihide ^a   Nakatsuji, Kan ^a   Komori, Fumio ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Germanium; Scanning tunneling microscopy; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography; Tunneling

Indexed keywords

CHEMICAL BONDS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ENERGY TRANSFER; MORPHOLOGY; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TOPOGRAPHY;

DIFFUSION BARRIERS; MICROSCOPIC MECHANISMS; SCANNING TUNNELING MICROSCOPY (STM); SURFACE RELAXATION AND RECONSTRUCTION;

GERMANIUM;

EID: 2442676912     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.04.010     Document Type: Article

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