p(2 × 2) phase of buckled dimers of Si(100) observed on n-type substrates below 40 K by scanning tunneling microscopy

Physical Review Letters

Volumn 89, Issue 28 I, 2002, Pages

  Hata, Kenji ^a   Yoshida, Shoji ^a   Shigekawa, Hidemi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; GROUND STATE; LOW TEMPERATURE PROPERTIES; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SPECTROSCOPY; SUBSTRATES; ULTRASONIC CLEANING;

LOW TEMPERATURE SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPY; SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0037207343     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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