Probe effect in scanning tunneling microscopy on Si(001) low-temperature phases

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-11

  Yoshida, Shoji ^a   Kimura, Tomohiko ^a   Takeuchi, Osamu ^a   Hata, Kenji ^a,d   Oigawa, Haruhiro ^a   Nagamura, Toshihiko ^b   Sakama, Hiroshi ^c   Shigekawa, Hidemi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Japan Science and Technology Agency   (Japan)

^c SOPHIA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; SILICON;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRON DIFFRACTION; LOW TEMPERATURE; PHASE TRANSITION; SCANNING TUNNELING MICROSCOPY;

EID: 13944262792     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235411     Document Type: Article

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