Antimony diffusion in strained and relaxed Si1-xGex

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1131-1134

  Paine, A D N ^a   Willoughby, A F W ^a   Morooka, M ^b   Bonar, J M ^a   Phillips, P ^c   Dowsett, M G ^c   Cooke, G ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Antimony; Diffusion; Si1 xgex; Silicon germanium

Indexed keywords

ANTIMONY; DIFFUSION; SEMICONDUCTOR ALLOYS;

DIFFUSION IN SILICON; DIFFUSION PROFILES; SI1-XGEX; SILICON GERMANIUM; VACANCY CONCENTRATION; VACANCY MOBILITY;

SI-GE ALLOYS;

EID: 0004191438     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1131     Document Type: Article

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