-
5
-
-
0041782286
-
-
T.-K. Mogi, M. O. Thompson, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, Appl. Phys. Lett. 69, 1273 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1273
-
-
Thompson, M.1
Poate, J.2
Luftman, H.3
-
6
-
-
0012980012
-
-
S. B. Herner, K. S. Jones, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, Appl. Phys. Lett. 68, 1687 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 1687
-
-
Herner, S.1
Jones, K.2
Poate, J.3
Luftman, H.4
-
7
-
-
36449003027
-
-
P. Kuo, J. L. Hoyt, J. F. Gibbson, J. E. Turner, R. D. Jacowitz, and T. I. Kamins, Appl. Phys. Lett. 62, 612 (1993).
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 612
-
-
Kuo, P.1
Hoyt, J.2
Gibbson, J.3
Turner, J.4
Jacowitz, R.5
Kamins, T.6
-
8
-
-
0000755647
-
-
N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, and B. Freer, Phys. Rev. Lett. 71, 883 (1993).
-
(1993)
Phys. Rev. Lett.
, vol.71
, pp. 883
-
-
Moriya, N.1
Feldman, L.2
Luftman, H.3
King, C.4
Bevk, J.5
Freer, B.6
-
9
-
-
12044253285
-
-
N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, and W. B. de Boer, Phys. Rev. Lett. 72, 2585 (1994).
-
(1994)
Phys. Rev. Lett.
, vol.72
, pp. 2585
-
-
Cowern, N.1
Zalm, P.2
van der Sluis, P.3
Gravesteijn, D.4
de Boer, W.5
-
10
-
-
18144433171
-
-
A. D. N. Paine, M. Morooka, A. F. W. Willoughby, J. M. Bonar, P. Phillips, M. J. Dowsett, and G. Cooke, Mater. Sci. Forum 196-201, 345 (1995).
-
(1995)
Mater. Sci. Forum
, vol.196-201
, pp. 345
-
-
Paine, A.1
Morooka, M.2
Willoughby, A.3
Bonar, J.4
Phillips, P.5
Dowsett, M.6
Cooke, G.7
-
12
-
-
0030242806
-
-
R. J. E. Hueting, J. W. Slotboom, A. Pruijmboom, W. B. de Boer, and N. E. B. Cowern, IEEE Trans. Electron Devices 43, 1518 (1996).
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1518
-
-
Hueting, R.1
Slotboom, J.2
Pruijmboom, A.3
de Boer, W.4
Cowern, N.5
-
13
-
-
36448998650
-
-
P. Kuo, J. L. Hoyt, J. F. Gibbson, J. E. Turner, and D. Lefforge, Appl. Phys. Lett. 67, 706 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 706
-
-
Kuo, P.1
Hoyt, J.2
Gibbson, J.3
Turner, J.4
Lefforge, D.5
-
14
-
-
0013458637
-
-
It is important to note that Eq. (1) is only valid for the intrinsic case. However, the intrinsic carrier concentrations (Formula presented) in strained (Formula presented) spacers, as calculated for the corresponding annealing temperatures and actual band offsets [R. People, Phys. Rev. B 32, 1405 (1985)], are comparable to the Sb concentration levels in the present equipment, and thus the effect of extrinsic carriers on the diffusion process is expected to be small.
-
(1985)
Phys. Rev. B
, vol.32
, pp. 1405
-
-
People, R.1
-
15
-
-
0001528106
-
-
H.-J. Gossmann, T. E. Haynes, P. A. Stolk, D. C. Jacobson, G. H. Gilmer, J. M. Poate, H. S. Luftman, T. K. Mogi, and M. O. Thompson, Appl. Phys. Lett. 71, 3862 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 3862
-
-
Haynes, T.1
Stolk, P.2
Jacobson, D.3
Gilmer, G.4
Poate, J.5
Luftman, H.6
Mogi, T.7
Thompson, M.8
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