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Volumn 58, Issue 20, 1998, Pages R13355-R13358

Effect of injection of Si self-interstitials on Sb diffusion in heterostructures

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EID: 0000070811     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.R13355     Document Type: Article
Times cited : (11)

References (16)
  • 14
    • 0013458637 scopus 로고
    • It is important to note that Eq. (1) is only valid for the intrinsic case. However, the intrinsic carrier concentrations (Formula presented) in strained (Formula presented) spacers, as calculated for the corresponding annealing temperatures and actual band offsets [R. People, Phys. Rev. B 32, 1405 (1985)], are comparable to the Sb concentration levels in the present equipment, and thus the effect of extrinsic carriers on the diffusion process is expected to be small.
    • (1985) Phys. Rev. B , vol.32 , pp. 1405
    • People, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.