On the formation of boron-germanium pairs in silicon-germanium mixed crystals

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 858-862

  Hattendorf, J ^a,c   Zeitz, W D ^a   Schroder W ^b   Abrosimov, N V ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

NMR; Boron implantation; DFT calculations; Silicon germanium crystals

Indexed keywords

CHEMICAL BONDS; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; NUCLEAR MAGNETIC RESONANCE; POLARIZATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING BORON;

CHARGE DISTRIBUTION; ELASTIC RECOIL DETECTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0347134656     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.229     Document Type: Conference Paper

References (28)

1. Infineon News Release INFCPR200307.181, München, 2003.
2. O. Madelung, Semiconductors: group IV elements and III-V compounds, in: R. Poerschke (Ed.), Data in Science and Technology, Springer Berlin, 1991.
3. Chen C.-H., Gösele U.M., Tann T.Y. Appl. Phys. A. 68:1999;19.
4. Lever R.F., Bonar J.M., Willoughby A.F.W. J. Appl. Phys. 83:1998;1988.
5. Kuznetsov A.Yu., Christensen J.S., Lindgren A.-C., Monakhov E.V., Radamson H.H., Nylandsted-Larsen A., Svesson B.G. Mater. Sci. Semicond. Proc. 4:2001;217.
6. Rajendran K., Schoenmaker W. J. Appl. Phys. 89:2001;980.
7. Hu S.M., Ahlgren D.C., Ronsheim P.A., Chu J.O. Phys. Rev. Lett. 67:1991;1450.
8. N. Zangenberg, Ph.D. Thesis, Department of Physics and Astronomy, University of Aarhus, Denmark, 2002.
9. Zangenberg N., Fage-Pedersen J., Hansen J.L., Larsen A.N. Defect Diffus. Forum. 194-99:2001;703.
10. Kuo P., Hoyt J.L., Gibbons J.F., Turner J.E., Lefforge D. Appl. Phys. Lett. 66:1995;580.
11. Abrosimov N.V., Rossolenko S.N., Thieme W., Gerhardt A., Schröder W. J. Crystal Growth. 174:1997;182.
12. Bohne W., Röhrich J., Röschert G. Nucl. Instrum. and Meth. B. 633:1998;136-138.
13. R.B. Firestone, V.S. Shirley (Eds.), Table of Isotopes, Wiley, New York, 1996.
14. Ohtsubo T., Nakayama Y., Izumikawa T., Takeda S., Nakamura N., Tanji H., Minamisono T. Hyperfine Interactions. 88:1994;25.
15. Yamaguchi T. Hyperfine Interactions. 120/121:1999;689.
16. Abragam A. Principles of Nuclear Magnetism. 1961;Oxford University Press, Oxford.
17. J. Hattendorf, Thesis, University of Marburg, Germany, 2001.
18. Tanaka M., Ochi S., Minamisono T., Mizobuchi A., Sugimoto K. Nucl. Phys. A. 263:1976;1.
19. P. Blaha, K. Schwarz, J. Luitz, A full potential linearized augmented plane wave package for calculating crystal properties, WIEN97, Karlheinz Schwarz, Techn. Universität Wien, Austria, 1999, ISBN 3-9501031-0-4.
20. Hohenberg P., Kohn W. Phys. Rev. 136:1964;B864.
21. Kohn W., Sham L.J. Phys. Rev. 140:1965;A1133.
22. Singh D.J. Planewaves, Pseudopotentials and the LAPW-Method. 1994;Kluwer Academic Publishers, Dordrecht.
23. Perdew J.P., Burke S., Ernzerhof M. Phys. Rev. Lett. 77:1996;3865.
24. Kohler B., Wilke S., Scheffler S., Kouba R., Ambrosch-Draxl C. Comput. Phys. Comm. 94:1996;31.
25. Hakala M., Puska M.J., Nieminen R.M. Phys. Rev. B. 61:2000;8155.
26. E. Kasper (Ed.), Properties of Strained and Relaxed Silicon Germanium, INSPEC, London, 1995, ISBN: 0 85296 826 4.
27. Jaccarino V., Walker L.R. Phys. Rev. Lett. 15:1965;258.
28. T. Wichert, Identification of defects in semiconductors, in: M. Stavola (Ed.), Semiconductors and Semimetals, Vol. 51B, Academic Press, San Diego, 1999, p. 297.