Arsenic diffusion in Si and strained SixGe1-x alloys at 1000°C

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 349-351

  Uppal, Suresh ^a   Bonar, J M ^a   Zhang, Jing ^b   Willoughby, A F W ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Arsenic; Diffusion; SiGe alloys; Strain

Indexed keywords

ARSENIC; BORON; COMPUTER SIMULATION; CONCENTRATION (PROCESS); DIFFUSION; GERMANIUM ALLOYS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING;

ARSENIC DIFFUSIVITY; DIFFUSION PROCESS; QUADRUPOLE MASS SPECTROMETER; SIGE ALLOYS;

SILICON ALLOYS;

EID: 10644263506     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.061     Document Type: Conference Paper

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