Composition and carrier-concentration dependence of the electronic structure of In yGa 1-yAs 1-xN x films with nitrogen mole fraction of less than 0.012

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Kang, Youn Seon ^a,c   Robins, Lawrence H ^a   Birdwell, Anthony G ^a,d   Shapiro, Alexander J ^a   Thurber, W Robert ^a   Vaudin, Mark D ^a   Fahmi, M M E ^b   Bryson, Damian ^b   Mohammad, S Noor ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b HOWARD UNIVERSITY   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d MEMC Southwest Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER-CONCENTRATION DEPENDENCE; NITROGEN-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; PHOTOREFLECTANCE (PR) SPECTROSCOPY; TENSILE STRAIN;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; HALL EFFECT; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITROGEN; REFLECTION; SILICON; SPECTROSCOPIC ANALYSIS; THIN FILMS;

INDIUM COMPOUNDS;

EID: 27844600288     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2127126     Document Type: Article

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