Comprehensive modeling of ion-implant amorphization in silicon

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 383-385

  Mok, K R C ^a,b   Jaraiz, M ^a   Martin Bragado, I ^a,c   Rubio, J E ^a   Castrillo, P ^a   Pinacho, R ^a   Srinivasan, M P ^b   Benistant, F ^d  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Synopsys GmbH   (Germany)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Amorphization; Amorphous pockets; Ion implant simulation

Indexed keywords

AGGLOMERATION; AMORPHIZATION; COMPUTER SIMULATION; ION IMPLANTATION; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SUPERCONDUCTING TRANSITION TEMPERATURE;

AMORPHOUS POCKETS; DAMAGE ACCUMULATION; ION-IMPLANT SIMULATION; SPATIAL CONFIGURATION;

SILICON;

EID: 27844594194     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.026     Document Type: Conference Paper

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