{3 1 1} Defect evolution in Si-implanted Si1-xGex alloys

Materials Science in Semiconductor Processing

Volumn 6, Issue 4, 2003, Pages 205-208

  Crosby, Robert T ^a,c   Jones, Kevin S ^a   Law, Mark E ^a   Nylandsted Larsen, A ^b   Lundsgaard Hansen, J ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b AARHUS UNIVERSITY   (Denmark)

^c New Engineering Building ^*  (United States)

Author keywords

Plan view transmission electron microscopy (PTEM); Si1 xGex alloys; 3 1 1 defect

Indexed keywords

CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; SILICON ALLOYS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BOND STRENGTH;

MATERIALS SCIENCE;

EID: 0242526748     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(03)00087-8     Document Type: Article

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