The effect of TEM sample thickness on nucleation and growth and dissolution of {311} defects in Si+ implanted Si

Materials Science in Semiconductor Processing

Volumn 1, Issue 2, 1998, Pages 99-106

  Li, Jing Hong ^a   Law, Mark E ^b   Jasper, Craig ^c   Jones, Kevin S ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c MOTOROLA INC   (United States)

Author keywords

Annealing kinetics; Defect evolution; Dislocation loops; Sample thickness; TEM; 311 defects

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DISSOLUTION; ION IMPLANTATION; NUCLEATION; RATE CONSTANTS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION LOOPS; PLAN VIEW TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032157031     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00013-4     Document Type: Article

References (12)

1. Jones KS, Prussin S, Weber ER. Appl Phys A 1988;45:1.
2. Schretelkamp RJ, Custer JS, Liefting JR, Lu WX, Saris FW. Mat Sci Rep 1991;6:275.
3. Liefting JR, Schretelkamp RJ, Vanhellemount J, Vandervorst W, Maex K, Custer JS, Saris FW. Appl Phys Lett 1993;63:1134.
4. Stolk PA, Gossmann H-J, Eaglesham DJ, Jacobson DC, Ratherty CJ, Giller GH, Jaraiz M, Poate JM, Luftman HS, Haynes TE. J Appl Phys 1997;81(9):6031.
5. Eaglesham DJ, Stock PA, Gossmann H-J, Haynes TE, Poate JM. Nucl Instr Meth Phys Res B 1995;106:191.
6. Jones KS, Liu J, Zhang L, Krishnamoorthy V, Dehoff RT. Nucl Instr Meth Phys Res B 1995;106:227.
7. TRIM. New York: Pergmon Press, 1995.
8. Giles MD. J Electrochem Soc 1991;138:1160.
9. Li J.H., Jones K.S., unpublished.
10. Jones K.S., Ph.D. thesis, University of California at Berkeley, 1989.
11. Stolk P.A., Gossmann H.-J., Eaglesham D.J., Jacobson D.C., Luftman H.S., Poate J.M. Mat Res Soc Symp Proc 1995:354.
12. Agarwal A, Haynes TE, Eaglesham DJ, Gossmann H-J, Jacobson DC, Erokhin YuE. Appl Phys Lett 1997;70:3332.