Self-assembled InN quantum dots grown on AlN/Si(111) and GaN/Al 2O3(0001) by plasma-assisted molecular-beam epitaxy under Stranski-Krastanow mode

Thin Solid Films

Volumn 494, Issue 1-2, 2006, Pages 79-83

  Shen, C H ^a   Lin, H W ^a   Lee, H M ^a   Wu, C L ^a   Hsu, J T ^b   Gwo, S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Indium nitride (InN); Plasma assisted molecular beam epitaxy (PA MBE); Quantum dot; Stranski Krastanow (S K) growth mode

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM NITRIDE (INN); PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE); STRANSKI-KRASTANOW (S-K) MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27844551938     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.216     Document Type: Conference Paper

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