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Volumn 45, Issue 12, 2005, Pages 1861-1867

Is the power-law model applicable beyond the direct tunneling regime?

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION MEASUREMENT; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; POWER ELECTRONICS; THRESHOLD ELEMENTS;

EID: 27744537040     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.03.010     Document Type: Article
Times cited : (14)

References (18)
  • 1
    • 0018727292 scopus 로고
    • Method of determining reliability screens for time-dependent dielectric breakdown
    • D.L. Crook Method of determining reliability screens for time-dependent dielectric breakdown IEEE Int Reliab Phys Symp 1979 1 7
    • (1979) IEEE Int Reliab Phys Symp , pp. 1-7
    • Crook, D.L.1
  • 5
    • 0001850832 scopus 로고
    • Hole injection oxide breakdown model for very low voltage lifetime extrapolation
    • K.F. Schuegraf, and C. Hu Hole injection oxide breakdown model for very low voltage lifetime extrapolation IEEE Int Reliab Phys Symp 1993 7 12
    • (1993) IEEE Int Reliab Phys Symp , pp. 7-12
    • Schuegraf, K.F.1    Hu, C.2
  • 6
    • 0032637383 scopus 로고    scopus 로고
    • A unified gate oxide reliability model
    • C. Hu, and Q. Lu A unified gate oxide reliability model IEEE Int Reliab Phys Symp 1999 47 51
    • (1999) IEEE Int Reliab Phys Symp , pp. 47-51
    • Hu, C.1    Lu, Q.2
  • 8
    • 0033741528 scopus 로고    scopus 로고
    • Experimental evidence for voltage driven breakdown models in ultra thin gate oxides
    • P.E. Nicollian, W.R. Hunter, and J.C. Hu Experimental evidence for voltage driven breakdown models in ultra thin gate oxides IEEE Int Reliab Phys Symp 2000 7 15
    • (2000) IEEE Int Reliab Phys Symp , pp. 7-15
    • Nicollian, P.E.1    Hunter, W.R.2    Hu, J.C.3
  • 14
    • 24144462317 scopus 로고    scopus 로고
    • Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: Indications for hydrogen induced transition in dominant degradation mechanism
    • T. Pompl, K.-H. Allers, R. Schwab, K. Hofmann, and M. Roehner Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: Indications for hydrogen induced transition in dominant degradation mechanism 2005 IEEE Int Reliab Phys Symp 2005 388 397
    • (2005) 2005 IEEE Int Reliab Phys Symp , pp. 388-397
    • Pompl, T.1    Allers, K.-H.2    Schwab, R.3    Hofmann, K.4    Roehner, M.5
  • 15
    • 21644467925 scopus 로고    scopus 로고
    • Fast wafer level data acquisition for reliability characterization of sub-100 nm CMOS Technologies
    • Kerber A, Kerber M. Fast wafer level data acquisition for reliability characterization of sub-100 nm CMOS Technologies. 2004 IEEE International Integrated Reliability Workshop; 2004. p. 41-5.
    • (2004) 2004 IEEE International Integrated Reliability Workshop , pp. 41-45
    • Kerber, A.1    Kerber, M.2
  • 16
    • 27744511347 scopus 로고    scopus 로고
    • Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
    • E.Y. Wu, and J. Suñé Power-law voltage acceleration: a key element for ultra-thin gate oxide reliability Microelectron Reliab 45 12 2005 1809 1834
    • (2005) Microelectron Reliab , vol.45 , Issue.12 , pp. 1809-1834
    • Wu, E.Y.1    Suñé, J.2
  • 18
    • 27744593119 scopus 로고    scopus 로고
    • Physical model for the power-law voltage and current acceleration of TDDB
    • A. Haggag, D. Menke, N. Liu, and M. Moosa Physical model for the power-law voltage and current acceleration of TDDB Microelectron Reliab 45 12 2005 1855 1860
    • (2005) Microelectron Reliab , vol.45 , Issue.12 , pp. 1855-1860
    • Haggag, A.1    Menke, D.2    Liu, N.3    Moosa, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.