Gate oxide reliability parameters in the range 1.6 to 10 nm

IEEE International Integrated Reliability Workshop Final Report

Volumn 2003-January, Issue , 2003, Pages 10-15

  Vollertsen, R P ^a   Wu, E Y ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Acceleration; Automatic testing; Breakdown voltage; Electric breakdown; Hydrogen; Inverse problems; Life estimation; Microelectronics; Rivers; Semiconductor device modeling

Indexed keywords

ACCELERATION; AUTOMATIC TESTING; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HYDROGEN; INDIUM COMPOUNDS; MICROELECTRONICS; MOS DEVICES;

ACCELERATION MODELS; ACCELERATION PARAMETERS; FIXED TIME; GATE OXIDE RELIABILITY; LIFE ESTIMATION; MODEL FREE; OXIDE THICKNESS; RELIABILITY DATA; RELIABILITY PARAMETERS; VOLTAGE ACCELERATION;

INVERSE PROBLEMS;

EID: 84947290804     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2003.1283291     Document Type: Conference Paper

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