A study of the SEU performance of InP and SiGe shift registers

IEEE Transactions on Nuclear Science

Volumn 52, Issue 4, 2005, Pages 1140-1147

  Hansen, D L ^a   Marshall, P W ^b,c   Lopez Aguado, R ^a,d   Jobe, K ^a   Carts, M A ^b,c   Marshall, C J ^b,c   Chu, P ^a   Meyer, S F ^a  

^a BOEING COMPANY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d RAYTHEON COMPANY   (United States)

Author keywords

Heavy ion; Indium phosphide; Proton; Silicon germanium; Single event upset

Indexed keywords

INDIUM COMPOUNDS; IRRADIATION; PROTONS; SILICON COMPOUNDS;

HEAVY ION; INDIUM PHOSPHIDE; SILICON GERMANIUM; SINGLE EVENT UPSET;

SHIFT REGISTERS;

EID: 27644597225     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.850490     Document Type: Article

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