Effects of data rate and transistor size on single event upset cross-sections for InP-based circuits

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 3166-3171

  Hansen, D L ^a   Chu, P ^a   Meyer, S F ^a  

^a BOEING COMPANY   (United States)

Author keywords

Heterojunction bipolar transistors; Indium compounds; Single event upset (SEU)

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA ACQUISITION; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS;

CHARGE COLLECTION DYNAMICS; CLOCK SPEEDS; SINGLE EVENT UPSET (SEU);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33144476135     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.855646     Document Type: Conference Paper

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