Lonization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1702-1707

  Wilkins, R ^a   Shojah Ardalan, S ^a   Kirk, W P ^a   Spencer, G F ^a   Bate, R T ^a   Seabaugh, A C ^a   Lake, R ^a  

^a PRAIRIE VIEW A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; GAMMA RAYS; IONIZATION OF SOLIDS; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS; TRANSCONDUCTANCE; TRANSISTORS; TUNNEL DIODES;

ALUMINUM ARSENIDE; PROTON IRRADIATED DEVICES; RESONANT TUNNELING DIODES; TWO DIMENSIONAL ELECTRON GAS TRANSISTORS;

QUANTUM INTERFERENCE DEVICES;

EID: 0033328597     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819142     Document Type: Article

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