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Volumn , Issue , 2000, Pages 286-289

Fabrication of InP-based HBT integrated circuits

Author keywords

[No Author keywords available]

Indexed keywords

RESONANT TUNNELING DIODES (RTD);

EID: 0033703913     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (8)

References (11)
  • 1
    • 0031074653 scopus 로고    scopus 로고
    • A bandpass Sigma-Delta Modulator with 92 dB SNR and center frequency continuously programmable from 0 to 70 MHz
    • G. Raghavan, et al., "A bandpass Sigma-Delta Modulator with 92 dB SNR and center frequency continuously programmable from 0 to 70 MHz," International Solid-state Circuits Conference Tech. Digest, pp. 214-215, 1997.
    • (1997) International Solid-state Circuits Conference Tech. Digest , pp. 214-215
    • Raghavan, G.1
  • 2
    • 0031234955 scopus 로고    scopus 로고
    • InP-HBT chip-set for 40 Gbls fiber optical communication systems operational at 3 v
    • M. Mokhtari, et al., "InP-HBT Chip-Set for 40 Gbls Fiber Optical Communication Systems Operational at 3 V," IEEE Journal of Solid-state Circuits, Vol. 32, pp. 1371-1382, 1997.
    • (1997) IEEE Journal of Solid-state Circuits , vol.32 , pp. 1371-1382
    • Mokhtari, M.1
  • 3
    • 0001925537 scopus 로고    scopus 로고
    • Dry etching of polyimide vias using an inductively coupled plasma source: Model and experiment
    • S. Thomas III, et al., "Dry Etching of Polyimide Vias Using an Inductively Coupled Plasma Source: Model and Experiment," 1998 GaAs MANTECH Digest, pp. 27-30.
    • 1998 GaAs MANTECH Digest , pp. 27-30
    • Thomas Iii, S.1
  • 4
    • 0000225051 scopus 로고    scopus 로고
    • Monolithic integration of resonant tunneling diodes and heterojunction bipolar transistors on patterned InP substrates
    • D. H. Chow, et al., "Monolithic Integration of Resonant Tunneling Diodes and Heterojunction Bipolar Transistors on Patterned InP Substrates," J. Vac. Sci. Technol. B 16, pp. 1413-1416, 1998.
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 1413-1416
    • Chow, D.H.1
  • 5
    • 79952616834 scopus 로고    scopus 로고
    • A two step polyimide etchback for integration of heterojunction bipolar transistors and resonant tunneling diodes
    • S. Thomas III, et al., "A Two Step Polyimide Etchback for Integration of Heterojunction Bipolar Transistors and Resonant Tunneling Diodes," 1999 GaAs MANTECH Digest, pp. 35-38.
    • 1999 GaAs MANTECH Digest , pp. 35-38
    • Thomas Iii, S.1
  • 6
    • 79952616075 scopus 로고    scopus 로고
    • The application of silicon-based process simulation tools to the fabrication of heterojunction bipolar transistors
    • C. H. Fields, et al., "The Application of Silicon-Based Process Simulation Tools to the Fabrication of Heterojunction Bipolar Transistors," 1998 GaAs MANTECH Digest, pp. 209-212.
    • 1998 GaAs MANTECH Digest , pp. 209-212
    • Fields, C.H.1
  • 7
    • 0032626929 scopus 로고    scopus 로고
    • Submicron transferred-substrate heterojunction bipolar transistors
    • Q. Lee, et al., "Submicron Transferred-Substrate Heterojunction Bipolar Transistors," IEEE EDL Vol. 20, pp. 396-398, 1999.
    • (1999) IEEE EDL , vol.20 , pp. 396-398
    • Lee, Q.1
  • 8
    • 0042087460 scopus 로고    scopus 로고
    • High-fT AlGaAshGaAs HBTs with reduced emitter resistance for low-power-consumption, highspeed ICs
    • Nara, Japan
    • th ISCS Proc., Nara, Japan, pp.309-312, 1998.
    • (1998) th ISCS Proc. , pp. 309-312
    • Niwa, T.1
  • 9
    • 0032310078 scopus 로고    scopus 로고
    • A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAshGaAs HBT IC technology
    • M. Sokolich, et al., "A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAshGaAs HBT IC technology," GaAs IC Symposium Tech. Digest, pp. 117-120, 1998.
    • (1998) GaAs IC Symposium Tech. Digest , pp. 117-120
    • Sokolich, M.1
  • 10
    • 0033312240 scopus 로고    scopus 로고
    • 69 GHz frequency divider with a cantilevered base InP DHBT
    • A. Gutierrez-Aitken, et al., "69 GHz Frequency Divider with a Cantilevered Base InP DHBT," IEDM Tech. Digest, pp. 779-782, 1999.
    • (1999) IEDM Tech. Digest , pp. 779-782
    • Gutierrez-Aitken, A.1
  • 11
    • 0033356997 scopus 로고    scopus 로고
    • High-speed multiplexers: A 50 Gb/s 4:l MUX in InP HBT technology
    • J. P. Mattia, et al., "High-speed Multiplexers: A 50 Gb/s 4:l MUX in InP HBT Technology," GaAs IC Symposium Tech. Digest, p. 189-192, 1999.
    • (1999) GaAs IC Symposium Tech. Digest , pp. 189-192
    • Mattia, J.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.