Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2672-2675

  Kang, B S ^a   Mehandru, R ^a   Kim, S ^a   Ren, F ^a   Fitch, R C ^b   Gillespie, J K ^b   Moser, N ^b   Jessen, G ^b   Jenkins, T ^b   Dettmer, R ^b   Via, D ^b   Crespo, A ^b   Baik, K H ^c   Gila, B P ^c   Abernathy, C R ^c   Pearton, S J ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DIFFUSION; ELECTRIC CURRENTS; ELECTRON MOBILITY; GALLIUM COMPOUNDS; HYDROGEN; MOS DEVICES; SCANDIUM COMPOUNDS; TRANSISTORS;

BARRIER HEIGHT; DRAIN-SOURCE VOLTAGE; ELECTRON MOBILITY TRANSISTORS; GATE DIELECTRICS;

SENSORS;

EID: 27344457719     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461268     Document Type: Conference Paper

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