High temperature semiconductor sensor for the detection of fluorine

Sensors and Actuators, B: Chemical

Volumn 49, Issue 1-2, 1998, Pages 133-138

  Vasiliev, Alexei ^b   Moritz, Werner ^a   Fillipov, Vladimir ^b   Bartholomäus, Lars ^a   Terentjev, Alexander ^b   Gabusjan, Tigran ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Fluorine; Lanthanum fluoride; Silicon carbide

Indexed keywords

CHEMICAL SENSORS; DESORPTION; FLUORINE; HIGH TEMPERATURE EFFECTS; LANTHANUM COMPOUNDS; SIGNAL TO NOISE RATIO; SILICON CARBIDE; SUBSTRATES; TEMPERATURE MEASUREMENT;

HIGH TEMPERATURE SEMICONDUCTOR SENSOR; LANTHANUM FLUORIDE;

SILICON SENSORS;

EID: 0032093446     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(98)00041-0     Document Type: Article

References (12)

1. T. Ichichi, S. Uchikoshi, M. Ishizuka (Riken Keiki Co.), Potentiostatic electrolytic acid gas sensor, Japanese Patent 07 55,768, 3 March 1995.
2. I.W. Murin, O.W. Glumov, D.B. Samusik, Potentiometric sensor for the determination of fluorine in gases, Zh. Prikl. Khim. 64 (10) (1991) 2171.
3. A.A. Vasiliev, A.V. Pisliakov, D.B. Samusik, Screen-printing technology of metal oxide and electrochemical gas sensors, in: Abstracts, VI European Conference 'Eurosensors - 6', Budapest, 1993, p. 346.
4. 2 using a field effect sensor, Sensors and Actuators B 2425 (1995) 194.
5. W. Moritz, L. Bartholomäus, T. Gabusjan, M. Reichling, J. Hartmann, A.A. Vasiliev, D.Yu. Godovski, V. Chaplanov, V.V. Malyshev, Improvement of the active layers of a field effect sensor for fluorine, presented at The Sixth International Meeting on Chemical Sensors, Gaithersburg, USA, 22-25 July 1996.
6. W. Moritz, L. Bartholomäus, T. Gabusjan, Silicon based sensor for fluorine gas, presented at the American Chemical Society Meeting, Orlando, USA, 25-30 August 1996.
7. M. Klein, Characterization of ion-sensitive layer systems with a C(V) measurement method operating at constant capacitance, Sensors and Actuators B 1 (1990) 354.
8. T. Gabusjan, L. Bartholomäus, W. Moritz, Improved ion conducting layer substituting the insulator in a capacitive chemical sensor, Sensors and Actuators (in press).
9. T. Hori, Gate Dielectrics and MOS ULSIs, Springer Series in Electronics and Photonics, vol. 34, Springer-Verlag, Berlin, 1997.
10. J. Janata, R.J. Huber, Ion-sensitive field effect transistors, Ion-Select. Rev. 1 (1979) 31.
11. E.H. Nicollian, J.R. Brews, MOS Physics and Technology, Wiley, New York, 1982.
12. 2 interface in MIS sensors, Sov. Microelectron. 18 (1989) 50-55.