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Physical Review Letters

Volumn 94, Issue 19, 2005, Pages

Electron-beam-induced disordering of the Si(001)-c(4×2) surface structure

(3) Shirasawa, Tetsuroh a Mizuno, Seigi a,b Tochihara, Hiroshi a

a KYUSHU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM CURRENT; BEAM ENERGY; ELECTRON-BEAM-INDUCED DISORDERING; ELECTRONIC EXCITATION;

CARRIER CONCENTRATION; ELECTRIC EXCITATION; ELECTRONS; IRRADIATION; LOW ENERGY ELECTRON DIFFRACTION; PHONONS; SILICON; SURFACE STRUCTURE;

ELECTRON BEAMS;

EID: 27144478959 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.94.195502 Document Type: Article

Times cited : (22)

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