Dynamics of exciton formation at the Si(100) c(4 × 2) surface

Physical Review Letters

Volumn 92, Issue 12, 2004, Pages

  Weinelt, Martin ^a   Kutschera, Michael ^a   Fauster, Thomas ^a   Rohlfing, Michael ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JACOBS UNIVERSITY BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; KINETIC ENERGY; LASER PULSES; LOW ENERGY ELECTRON DIFFRACTION; PERTURBATION TECHNIQUES; PHONONS; PHOTOEMISSION; PHOTONS; SILICON; SURFACE TREATMENT;

CONDUCTION BANDS; SURFACE BANDS; TWO-PHOTON PHOTOEMISSION;

EXCITONS;

EID: 2342454973     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.126801     Document Type: Article

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