SCOPUS 정보 검색 플랫폼

Volumn 308-310, Issue , 2001, Pages 139-142

Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon

(8) Andersen, O a Dobaczewski, L a,b Peaker, A R a Bonde Nielsen, K c Hourahine, B d Jones, R d Briddon, P R e Oberg S f

a UNIVERSITY OF MANCHESTER (United Kingdom)

b INSTITUTE OF PHYSICS (Poland)

c AARHUS UNIVERSITY (Denmark)

d UNIVERSITY OF EXETER (United Kingdom)

e NEWCASTLE UNIVERSITY (United Kingdom)

f LULEÅ UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

Hydrogen carbon pair; Laplace DLTS; Silicon; Uniaxial stress

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRON TRANSITIONS; HYDROGEN; ION IMPLANTATION; LAPLACE TRANSFORMS; SPECTROSCOPIC ANALYSIS; STRESS ANALYSIS;

PROTON IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 4244059961 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00672-X Document Type: Article

Times cited : (6)

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