Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1879-1885

  Pawlowski, Michal ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Deep traps; Photocurrent kinetics; PITS

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; ELECTRON TRAPS; KINETIC THEORY; PARAMETER ESTIMATION; PHOTOCURRENTS;

PHOTOCURRENT KINETICS;

SEMICONDUCTING SILICON;

EID: 0036838411     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00096-5     Document Type: Conference Paper

References (12)

1. Hurtes C., Boulou M., Mitonneau A., Bois D. Deep-level spectroscopy in high-resistivity materials. Appl Phys Lett. 32(12):1978;821-823.
2. Look D.C. The electrical and photoelectronic properties of semi-insulating GaAs. Willardson R.K., Beer A.C. Semiconductors and semimetals. vol. 19:1983;76-123 Academic Press, New York.
3. Fairman R.D., Morin F.J., Oliver J.R. The influence of semi-insulating substrates on the electrical properties of high-purity GaAs buffer layers grown by vapour-phase epitaxy. Inst Phys Conf Ser. 45:1979;134-143.
4. Yoshie O., Kamihara M. Photo-induced current transient spectroscopy in high-resistivity bulk material. Jpn J Appl Phys. 24(4):1985;431-440.
5. Kaminski P., Pawlowski M., Cwirko R., Palczewska M., Kozlowski R. Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transient. Mat Sci Eng. B42:1996;213-216.
6. Kozlowski R., Kaminski P., Nosarzewska-Orlowska E. High-resolution photoinduced transient spectroscopy as a new tool for defect engineering of irradiated silicon. In: Proc First ENDEASD Workshop. 1999. p. 186-195.
7. Morimoto J., Fudamoto M., Tahira K., Kida T., Kato S., Miyakawa T. Spectral analysis of deep level transient spectroscopy (SADLTS). Jpn J Appl Phys. 26(10):1987;1634-1640.
8. Agaewal S., Mohapatra Y.N., Singh V.A. Temperature-time duality and deep level spectroscopies. J Appl Phys. 77(7):1995;3155-3161.
9. Istratov A.A. The resolution limit of traditional correlation functions for deep level transient spectroscopy. Rev Sci Instrum. 68(10):1997;3861-3865.
10. Bube R.H. A qualitative two-center model. Photoelectronic properties of semiconductors. 1992;81 Cambridge University Press, Cambridge.
11. Pawlowski M. Effect of temperature errors on accuracy of deep traps parameters obtained from transient measurements. Rev Sci Instrum. 70(8):1999;3425-3428.
12. + -n diodes J Appl Phys. 48(4):1977;1668-1672.