Radiation hardness of different silicon materials after high-energy electron irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 530, Issue 1-2, 2004, Pages 110-116

  Dittongo, S ^a,b   Bosisio, L ^a,b   Ciacchi, M ^a   Contarato, D ^c   D'Auria, G ^d   Fretwurst, E ^c   Lindstrom G ^c  

^a UNIVERSITY OF TRIESTE   (Italy)

^b SEZIONE DI TRIESTE   (Italy)

^c UNIVERSITY OF HAMBURG   (Germany)

^d SINCROTRONE TRIESTE   (Italy)

Author keywords

Electron radiation effects; High resistivity silicon devices; Radiation hardness

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DIFFUSION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON IRRADIATION; EPITAXIAL GROWTH; RADIATION EFFECTS; RADIATION HARDENING;

ELECTRON RADIATION EFFECTS; HIGH ENERGY ELECTRON IRRADIATION; HIGH RESISTIVITY SILICON DEVICES;

SILICON;

EID: 4243149340     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.05.057     Document Type: Conference Paper

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