Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by atomic force microscope

Solid-State Electronics

Volumn 49, Issue 9 SPEC. ISS., 2005, Pages 1497-1503

  Ionica, I ^a   Montes L ^a   Ferraton, S ^a   Zimmermann, J ^a   Saminadayar, L ^b   Bouchiat, V ^b  

^a IMEP LAHC   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

AFM lithography; Coulomb blockade; Field effect; One dimensional electrical transport; Silicon nanostructures; SOI

Indexed keywords

ARRAYS; ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; FIELD EFFECT SEMICONDUCTOR DEVICES; MATHEMATICAL MODELS; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; TEMPERATURE DISTRIBUTION;

AFM LITHOGRAPHY; FIELD EFFECT; ONE-DIMENSIONAL ELECTRICAL TRANSPORT; SILICON NANOSTRUCTURES; SOI;

SILICON ON INSULATOR TECHNOLOGY;

EID: 25844525527     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.07.012     Document Type: Conference Paper

References (17)

1. P.M. Campbell, E.S. Snow, and P.J. McMarr Fabrication of nanometer-scale side-gated silicon field effect transistors with an atomic force microscope Appl Phys Lett 66 1995 1388 1390
2. J. Servat, P. Gorostiza, F. Sanz, F. Perez Murano, N. Barniol, and G. Abadal Nanometer scale lithography of silicon (1 0 0) surfaces using tapping mode atomic force microscopy J Vacc Sci Tech A 14 1996 1208 1212
3. B. Legrand, and D. Stievenard Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique Appl Phys Lett 74 1999 4049 4051
4. V. Bouchiat, M. Faucher, T. Fourner, B. Pannetier, C. Thirion, and W. Wernsdorfer Resistless patterning of quantum nanostructures by local anodization with an atomic force microscope Microelectron Eng 61 2002 517 522
5. N. Clement, D. Tonneau, H. Dallaporta, V. Bouchiat, D. Fraboulet, and D. Mariolle Electronic transport properties of single-crystal silicon nanowires fabricated using an atomic force microscope Physica E 13 2002 999 1002
6. Ionica I, Montès L, Ferraton S, Zimmermann J, Bouchiat V, Saminadayar L. Silicon Nanostructures Patterned on SOI by AFM Lithography. Nanotech Conference. Boston, USA, 2004;3:165-8.
7. www.soitec.com
8. F. Marchi, V. Bouchiat, H. Dallaporta, V. Safarov, D. Tonneau, and P. Doppelt Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope J Vac Sci Tech B 16 1998 2952 2956
9. D. Stievenard, P.A. Fontaine, and E. Dubois Nanooxidation using a scanning probe microscope: an analytical model based on field induced oxidation Appl Phys Lett 70 1997 3272 3274
10. K. Morimoto, F. Perez-Murano, and J.A. Dagata Density variations in scanned probe oxidation Appl Surf Sci 158 2000 205 216
11. O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka, and S. Sugiyama Anisotropic etching of silicon in TMAH solutions Sens Actuat A 1 1992 51 57
12. H.J. Hovel Si film characterization in SOI substrates by the HgFET technique Solid-State Electron 47 2003 1311 1333
13. H.F. Okorn-Schmidt Characterization of silicon surface preparation processes for advanced gate dielectrics IBM J R&D 43 1999 351 365
14. A. Tilke, R.H. Blick, H. Lorenz, and J.P. Kotthaus Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration J Appl Phys 89 2001 8159 8162
15. H. Grabert, and M.H. Devoret Single charge tunneling 1991 Plenum Publishing Corporation New York
16. A.A. Middleton, and N.S. Wingreen Collective transport in arrays of small metallic dots Phys Rev Lett 71 1993 3198 3201
17. D.M. Kaplan, V.A. Sverdlov, and K.K. Likharev Coulomb gap, Coulomb blockade, and dynamic activation energy in frustrated single-electron arrays Phys Rev B 68 2003 45321-1