Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Journal of Electronic Materials

Volumn 30, Issue 12, 2001, Pages 1493-1498

  Zhong, Huicai ^a   Heuss, Greg ^a   Suh, You Seok ^a   Misra, Veena ^a   Hong, Shin Nam ^b  

^a North Carolina State University   (United States)

^b Hankuk Aviation University   (South Korea)

Author keywords

Dielectrics; Gate electrodes; MOS; Ru; RuO2; Zr silicate; ZrO2

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; GATES (TRANSISTOR); MOSFET DEVICES; RUTHENIUM; RUTHENIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICATES; STOICHIOMETRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM COMPOUNDS;

GATE ELECTRODES; SILICATE DIELECTRICS;

ELECTRODES;

EID: 0035737920     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0164-2     Document Type: Article

References (22)