STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 319-324

  Oberbeck, Lars ^a   Hallam, Toby ^a   Curson, Neil J ^a   Simmons, Michelle Y ^a   Clark, Robert G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Molecular beam epitaxy; Quantum computer; Scanning tunnelling microscopy; Silicon

Indexed keywords

ANNEALING; DIMERS; EPITAXIAL GROWTH; HYDROGEN; HYDROGENATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOSPHORUS; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; THERMAL EFFECTS;

QUANTUM COMPUTERS;

SEMICONDUCTING SILICON;

EID: 0038241594     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00370-2     Document Type: Conference Paper

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