Investigation of porous GaAs layers formed on n +-type GaAs by electrochemical anodization in HF solution

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 1, 2005, Pages 65-71

  Beji, L ^a   Sfaxi, L ^a   BenOuada, H ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; ELECTROCHEMICAL ANODIZATION; ELECTROCHEMICAL ETCHING; PORE FORMATION;

ANODES; ANODIC OXIDATION; CRYSTALLINE MATERIALS; ELECTROCHEMISTRY; ELECTROLYTES; ELECTROLYTIC POLISHING; ENERGY GAP; ETCHING; HYDROFLUORIC ACID; INTERFACES (MATERIALS); MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS MATERIALS; SOLUTIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 25444467163     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200406895     Document Type: Article

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