High spatial resolution micro-Raman temperature measurements of nitride devices (FETs and light emitters)

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 824-831

  Kuball, M ^a   Pomeroy, J W ^a   Rajasingam, S ^a   Sarua, A ^a   Uren, M J ^b   Martin, T ^b   Lell, A ^c   Harle V ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE TEMPERATURE; HIGH SPATIAL RESOLUTION; MICRO-RAMAN TEMPERATURE MEASUREMENTS; MICROMETER-SIZE RESOLUTION;

FIELD EFFECT TRANSISTORS; INFRARED RADIATION; OPTOELECTRONIC DEVICES; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; TEMPERATURE MEASUREMENT;

NITRIDES;

EID: 25444447374     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461294     Document Type: Conference Paper

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