Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)

Journal of Physics Condensed Matter

Volumn 14, Issue 13, 2002, Pages 3479-3497

  Herbert, D C ^a   Uren, M J ^a   Hughes, B T ^a   Hayes, D G ^a   Birbeck, J C H ^a   Balmer, R ^a   Martin, T ^a   Crow, G C ^b,d   Abram, R A ^b   Walmsley, M ^b   Davies, R A ^c   Wallis, R H ^c   Phillips, W A ^c   Jones, S ^c  

^a QINETIQ   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

^c Marconi Optical Components   (United Kingdom)

^d Corning Research Centre ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON SCATTERING; GALLIUM NITRIDE; HETEROJUNCTIONS; HOT CARRIERS; IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

HETEROJUNCTION FIELD EFFECT TRANSISTORS; HOT CARRIER SCATTERING RATES; IONIZATION COEFFICIENTS; SHORT-GATE-LENGTH TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0037041137     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/13/307     Document Type: Article

References (17)

1. Applications of GaN-based heterojunction FETS for advanced wireless communication
2. Back bias effects in AlGaN/GaN HFETs
3. Experimental evaluation of impact ionisation coefficient in GaN
4. Time resolved electroabsorption measurement of the electron velocity-field characteristics in GaN
5. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries
6. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on ensemble Monte Carlo calculation including a full zone band structure
7. Monte Carlo calculation of the velocity-field relationship for gallium nitride
8. Ultrafast electron dynamics study of GaN
9. Transient electron transport in wurtzite GaN, InN and AlN
10. Two-dimensional electron gases induced by spontaneous and piezoelectric polarisation charges in N- and Ga-face AlGaN heterostructures
11. The impact of surface states on the dc and RF characteristics of AlGaN/GaN HFETs
12. Treatment of soft threshold in impact ionisation
13. Very high breakdown voltage and large transconductance realised on GaN heterojunction field effect transistors
14. Breakdown voltage in ultra-thin p-i-n diodes
15. The transient signal response of submicron vertical silicon field effect transistors
16. The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation