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Volumn 284, Issue 1-2, 2005, Pages 156-165

Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry

Author keywords

A1. Ellipsometry; A3. MBE; B1. SiC; B2. GaN

Indexed keywords

CHARACTERIZATION; ELLIPSOMETRY; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON CARBIDE; SUBSTRATES;

EID: 25144490560     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.016     Document Type: Article
Times cited : (15)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.