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Volumn 284, Issue 1-2, 2005, Pages 156-165
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Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry
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Author keywords
A1. Ellipsometry; A3. MBE; B1. SiC; B2. GaN
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Indexed keywords
CHARACTERIZATION;
ELLIPSOMETRY;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
SILICON CARBIDE;
SUBSTRATES;
GAN;
NITRIDATION;
SIC;
SUBSTRATE CLEANING;
GALLIUM NITRIDE;
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EID: 25144490560
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.07.016 Document Type: Article |
Times cited : (15)
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References (14)
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