Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2665-2671

  Losurdo, M ^a   Capezzuto, P ^a   Bruno, G ^a   Lefebvre, P R ^b   Irene, E A ^b  

^a CNR   (Italy)

^b University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000049433     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590253     Document Type: Article

References (30)

1. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991).
2. S. Nakamura, MRS Bull. 22, 29 (1997).
3. C. Y. Hwang, M. J. Schurman, W. E. Mayo, Y. Li, Y. Lu, H. Liu, T. Salagaj, and R. A. Stall, J. Vac. Sci. Technol. A 13, 672 (1995).
4. S. J. Pearton, E. E. Haller, and A. G. Elliot, Appl. Phys. Lett. 44, 684 (1984).
5. M. E. Jones, J. R. Shealy, and J. R. Engstrom, Appl. Phys. Lett. 67, 542 (1995).
6. S. Fujieda and Y. Matsumoto, Jpn. J. Appl. Phys., Part 2 30, L1665 (1991).
7. L. A. DeLouise, J. Vac. Sci. Technol. A 10, 1637 (1992).
8. X. Y. Zhu, M. Wolf, T. Huett, and J. M. White, J. Chem. Phys. 97, 5856 (1992).
9. R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O'Steen, and T. C. McGill, Appl. Phys. Lett. 66, 2861 (1995).
10. A. Masuda, Y. Yonezawa, A. Morimoto, and T. Shimizu, Jpn. J. Appl. Phys., Part 1 34, 1075 (1995).
11. A. Kikuchi, H. Hoshi, and K. Kishino, Jpn. J. Appl. Phys., Part 1 33, 688 (1994).
12. J. Andrews, Y. Z. Hu, and E. A. Irene, Proc. SPIE 1188, 162 (1989).
13. G. Bruno, M. Losurdo, and P. Capezzuto, J. Vac. Sci. Technol. A 13, 349 (1995).
14. G. Bruno, P. Capezzuto, and M. Losurdo, Phys. Rev. B 54, 17 175 (1996).
15. M. Losurdo, P. Capezzuto, and G. Bruno, Phys. Rev. B 56, 10 621 (1997).
16. D. A. G. Bruggeman, Ann. Phys. (Leipzig) 24, 636 (1935).
17. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
18. N. V. Edwards, M. D. Bremser, T. W. Weeks, R. S. Kern, R. F. Davis, and D. E. Aspnes, Appl. Phys. Lett. 69, 2065 (1996).
19. D. Brandt, H. Yang, and K. M. Ploog, Phys. Rev. B 54, 4432 (1996).
20. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, edited by J. Chastain (Perkin-Elmer, Eden Prairie, MN, 1992).
21. J. T. Wolan, C. K. Mount, and G. B. Hoflund, J. Vac. Set. Technol. A 15, 2502 (1997).
22. The XPS analysis of an epitaxial GaN film has been measured by us on a sample (5 μm thick on sapphire) supplied by EMCORE.
23. H. Yao and P. G. Snyder, Thin Solid Films 206, 283 (1991).
24. R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O'Steen, and T. C. McGill, Appl. Phys. Lett. 66, 2861 (1995).
25. S. Gourrier, L. Sinit, P. Friedel, and P. K. Larsen, J. Appl. Phys. 54, 3993 (1983).
26. K. W. Vogt and P. A. Kohl, J. Appl. Phys. 74, 6448 (1993).
27. K. D. Choquette, M. Hong, R. S. Freund, J. P. Mannaerts, and R. C. Wetzel, J. Vac. Sci. Technol. B 9, 3502 (1991).
28. P. Hill, D. I. Westwood, L. Haworth, J. Lu, and J. E. Macdonald, J. Vac. Sci. Technol. B 15, 1133 (1997).
29. Landolf-Bornstein, Semiconductors, edited by O. Madelung (Springer, Berlin, 1982), Vol. 17, Subvol. a.
30. T. Ito, I. Kato, and H. Ishikawa, Mater. Res. Soc. Symp Proc 38, 473 (1985).