Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1181-1185

  Kim, Tong Ho ^a   Choi, Soojeong ^a   Morse, Mike ^a   Wu, Pae ^a   Yi, Changhyun ^a   Brown, April ^a   Losurdo, Maria ^b   Giangregorio, Maria M ^b   Bruno, Giovanni ^b  

^a USA   (United States)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH CLEANING; MORPHOLOGICAL PROPERTIES; SIC SURFACE;

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDING; NUCLEATION; OXYGEN;

GALLIUM NITRIDE;

EID: 25144453669     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1878997     Document Type: Conference Paper

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