Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Uedono, A ^a,d   Suzuki, T ^b   Nakamura, T ^b   Ohdaira, T ^c   Suzuki, R ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROPLATED CU FILMS; FILM THICKNESS; SELF-ANNEALING; VACANCY-TYPE DEFECTS;

ANNEALING; COPPER; ELECTROPLATING; GRAIN GROWTH; POSITRON ANNIHILATION SPECTROSCOPY; RECRYSTALLIZATION (METALLURGY);

METALLIC FILMS;

EID: 25144438528     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2009813     Document Type: Article

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