Relaxation process of photoexcited carriers in GaAs structures with low-temperature-grown layers

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Araya, T ^a   Kato, N ^a   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOEXCITED CARRIERS; PHOTOLUMINESCENCE INTENSITY; TRAP SITES;

PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; THERMAL DIFFUSION;

GALLIUM COMPOUNDS;

EID: 25144438510     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2030408     Document Type: Article

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