Photoluminescence of nearly stoichiometric LT-GaAs and LT-GaAs/AlAs MQW

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 112-116

  Obata, T ^a   Fukushima, S ^a   Araya, T ^a   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

ALUMINUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035398187     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00643-1     Document Type: Conference Paper

References (14)