Large optical nonlinearity and fast response time in low-temperature grown GaAs/AlAs multiple quantum wells

Applied Physics Letters

Volumn 77, Issue 1, 2000, Pages 58-60

  Okuno, Tsuyoshi ^a   Masumoto, Yasuaki ^a   Ito, Masashi ^b   Okamoto, Hiroshi ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000556987     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126876     Document Type: Article

References (23)

1. S. Gupta, J. F. Whitaker, and G. A. Mourou, IEEE J. Quantum Electron. 28, 2464 (1992).
2. E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and C. L. Chang, Appl. Phys. Lett. 63, 2248 (1993).
3. H. S. Loka, S. D. Benjamin, and P. W. E. Smith, IEEE J. Quantum Electron. 34, 1426 (1998).
4. U. Keller, K. J. Weingarten, F. X. Kartner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Honninger, N. Matuschek, and J. Aus der Au, IEEE J. Sel. Top. Quantum Electron. 2, 435 (1996).
5. R. Takahashi, Y. Kawamura, T. Kagawa, and H. Iwamura, Appl. Phys. Lett. 65, 1790 (1994).
6. R. Takahashi, Y. Kawamura, and H. Iwamura, Appl. Phys. Lett. 68, 153 (1996).
7. M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, R. C. Lutz, P. Specht, and E. R. Weber, Appl. Phys. Lett. 74, 3134 (1999).
8. M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht, and E. R. Weber, Appl. Phys. Lett. 74, 1269 (1999).
9. D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, P. W. Smith, A. C. Gossard, and W. T. Tsang, Appl. Phys. Lett. 41, 679 (1982).
10. I. Lahiri, D. D. Nolte, E. S. Harmon, M. R. Melloch, and J. M. Woodall, Appl. Phys. Lett. 66, 2519 (1995).
11. P. W. Juodawlkis, D. T. McInturff, and S. E. Ralph, Appl. Phys. Lett. 69, 4062 (1996).
12. U. Keller, Appl. Phys. B: Lasers Opt. 58, 347 (1994).
13. K. Iizuka, K. Matsumaru, T. Suzuki, H. Hirose, K. Suzuki, and H. Okamoto, J. Cryst. Growth 150, 13 (1995).
14. Y. Masumoto, S. Tarucha, and H. Okamoto, J. Phys. Soc. Jpn. 55, 57 (1986).
15. B. Fluegel, M. Joffre, S. H. Park, R. Morgan, Y. Z. Hu, M. Lindberg, S. W. Koch, D. Hulin, A. Migus, A. Antonetti, and N. Peyghambarian, J. Cryst. Growth 101, 634 (1990).
16. 2)=0.45 in all λ (the error of r was estimated to be 0.02 in the fitting for the λ=830 nm data). We confirmed that I, is minimum at the exciton peaks regardless of the assumption.
17. For the 360°C-grown MQW, r=0.48±0.02.
18. 2 is neutral excess As included in LT-grown layers. The condition r>0.4 was assumed.
19. s for bulk GaAs.
20. K. Mahalingam, N. Otsuka, M. R. Melloch, and J. M. Woodall, Appl. Phys. Lett. 60, 3253 (1992).
21. M. N. Chang, N. T. Yeh, C. M. Lu, K. C. Hsieh, and J.-I. Chyi. Appl. Phys. Lett. 75, 52 (1999).
22. B. Lita, S. Ghaisas, R. S. Goldman, and M. R. Melloch, Appl. Phys. Lett. 75, 4082 (1999).
23. S. Schmitt-Rink, D. S. Chemla, and D. A. B. Miller, Phys. Rev. B 32, 6601 (1985).