Surface atomic process of incorporation of excess arsenic in molecular-beam epitaxy of GaAs

Surface Science

Volumn 458, Issue 1, 2000, Pages 162-172

  Suda, A ^a   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; ARSENIC; ATOMS; CHEMISORPTION; DESORPTION; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SURFACE STRUCTURE;

GROWTH TEMPERATURE; LANGMUIR ADSORPTION MODEL; SURFACE ATOMIC PROCESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033727021     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00435-0     Document Type: Article

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