SIMS depth profiling of N and In in a ZnO single crystal

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 359-362

  Park, Dae Chul ^a   Sakaguchi, Isao ^a   Ohashi, Naoki ^a   Hishita, Shunichi ^a   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Diffusion; In; Ion implantation; N; SIMS; ZnO

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; INDIUM; ION IMPLANTATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

DEPTH PROFILING;

SINGLE CRYSTALS;

EID: 0037438241     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00676-1     Document Type: Conference Paper

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