Characteristics of the electron temperature in VHF-excited SiH 4/H2 plasma produced using a ladder-shaped electrode

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 503-507

  Mashima, H ^a   Takeuchi, Y ^a   Murata, M ^a   Noda, M ^a   Yamada, A ^a   Takatsuka, H ^a   Urabe, O ^b   Kawai, Y ^b  

^a MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Ladder shaped electrode; Langmuir probe; Plasma CVD; Plasma parameter; SiH4 H2 plasma; VHF plasma

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; GLASS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA THEORY; SILANES; VACUUM APPLICATIONS;

LADDER SHAPED ELECTRODES; LANGMUIR PROBE; PLASMA CVD; PLASMA PARAMETERS; SIH4/H2 PLASMA; VHF PLASMA;

SILICON COMPOUNDS;

EID: 2442650613     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.021     Document Type: Article

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