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Volumn 36, Issue 7 SUPPL. B, 1997, Pages 4563-4567

Production of inductively coupled RF plasma using a ladder-shaped antenna

Author keywords

a Si:H films; High discharge frequency; Inductively coupled plasma; Ladder shaped antenna; Plasma CVD

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC DISCHARGES; PLASMA DENSITY; PLASMA FLOW; PLASMA PROBES; PRESSURE EFFECTS; SUBSTRATES;

EID: 0031175874     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4563     Document Type: Article
Times cited : (17)

References (16)
  • 2
    • 84918971329 scopus 로고
    • Proc. 10th Conf. Solid State Devices, Tokyo, 1978
    • 1
    • J. C. Knight: Proc. 10th Conf. Solid State Devices, Tokyo, 1978 Jpn. J. Appl. Phys. 18 (1979) Suppl. 18-1, p. 101.
    • (1979) Jpn. J. Appl. Phys. , vol.18 , Issue.18 SUPPL. , pp. 101
    • Knight, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.