The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3031-3033

  Yeoh, T S ^a   Swint, R B ^a   Elarde, V C ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; QUANTUM COMPUTING; SELECTIVE AREA EPITAXY (SAE); SURFACE MOBILITY;

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2442636545     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1705731     Document Type: Article

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