|
|
Volumn 170, Issue 1-4, 1997, Pages 563-567
|
|
Direct observation of the transition from a 2D layer to 3D islands at the initial stage of InGaAs growth on GaAs by AFM
a
a
a
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ATOMIC FORCE MICROSCOPY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
STRANSKI-KRASTANDOW GROWTH MODE;
METALLORGANIC VAPOR PHASE EPITAXY;
|
|
EID: 0030646389
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00645-8 Document Type: Article |
|
Times cited : (16)
|
|
References (8)
|
