Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 4043-4046

  Mano, T ^a   Notzel R ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; GAAS(1 0 0); SELF-ASSEMBLED; SHAPE ANISOTROPY; STRAIN REDUCTION; SUPERLATTICE STRUCTURES; XRD;

ANISOTROPY; ANNEALING; ATOMIC FORCE MICROSCOPY; DESORPTION; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 18644384552     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506191     Document Type: Article

References (20)

1. C. W. Snyder, B. G. Orr, D. Kessler, and L. M. Sander, Phys. Rev. Lett. 66, 3032 (1991). prl PRLTAO 0031-9007
2. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993). apl APPLAB 0003-6951
3. Y. Nabetani, T. Ishikawa, S. Noda, and A. Sasaki, J. Appl. Phys. 76, 347 (1994). jap JAPIAU 0021-8979
4. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). apl APPLAB 0003-6951
5. H. Li, J. Wu, Z. Wang, and T. Daniels-Race, Appl. Phys. Lett. 75, 1173 (1999). apl APPLAB 0003-6951
6. C. Walther, W. Hoerstel, H. Niehus, J. Erxmeyer, and W. T. Masselink, J. Cryst. Growth 209, 572 (2000). jcr JCRGAE 0022-0248
7. K. Tillmann, D. Gerthsen, P. Pfundstein, A. Förster, and K. Urban, J. Appl. Phys. 78, 3824 (1995). jap JAPIAU 0021-8979
8. W. Ma, R. Nötzel, H.-P. Schönherr, and K. H. Ploog, Appl. Phys. Lett. 79, 4219 (2001). apl APPLAB 0003-6951
9. W. Ma, R. Nötzel, A. Trampert, M. Ramsteiner, H. Zhu, H.-P. Schönherr, and K. H. Ploog, Appl. Phys. Lett. 78, 1297 (2001). apl APPLAB 0003-6951
10. L. Tapfer, G. C. La. Rocca, H. Lage, R. Cingolani, P. Grambow, A. Fischer, D. Heitmann, and K. Ploog, Surf. Sci. 267, 227 (1992). sus SUSCAS 0039-6028
11. L. De Caro, P. Sciacovelli, and L. Tapfer, Appl. Phys. Lett. 64, 34 (1994). apl APPLAB 0003-6951
12. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996). prl PRLTAO 0031-9007
13. F. Liu, S. E. Davenport, H. M. Evans, and M. G. Lagally, Phys. Rev. Lett. 82, 2528 (1999). prl PRLTAO 0031-9007
14. P. B. Joyce, T. J. Krzyzewski, P. H. Steans, G. R. Bell, J. H. Neave, and T. S. Jones, Surf. Sci. 492, 345 (2001). sus SUSCAS 0039-6028
15. P. B. Joyce, T. J. Krzyzewski, G. R. Bell, and T. S. Jones, Appl. Phys. Lett. 79, 3615 (2001). apl APPLAB 0003-6951
16. S. Malik, C. Roberts, R. Murray, and M. Pate, Appl. Phys. Lett. 71, 1987 (1997). apl APPLAB 0003-6951
17. S. J. Xu, X. C. Wang, S. J. Chua, C. H. Wang, W. J. Fan, J. Jiang, and X. G. Xie, Appl. Phys. Lett. 72, 3335 (1998). apl APPLAB 0003-6951
18. S. Fafard and C. N. Allen, Appl. Phys. Lett. 75, 2374 (1999). apl APPLAB 0003-6951
19. M. Kasu and N. Kobayashi, J. Cryst. Growth 170, 246 (1997). jcr JCRGAE 0022-0248
20. T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 81, 1705 (2002). apl APPLAB 0003-6951