Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 672, Issue , 2001, Pages

  Yeoh, T S ^a   Liu, C P ^a   Kim, Y W ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GAS LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

COHERENT CRITICAL THICKNESS; SEMICONDUCTING INDIUM ARSENIDE; STRANSKI-KRASTANOW SELF ORGANIZED GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035557865     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-671-q8.7     Document Type: Conference Paper

References (6)