Nano on nano

IEEE Circuits and Devices Magazine

Volumn 19, Issue 3, 2003, Pages 26-31

  Yeoh, T S ^a   Liu, C P ^b   Swint, R B ^a   Gaur, A ^a   Elarde, V C ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRONS; EPITAXIAL GROWTH; LASERS; LIGHT EMISSION; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THIN FILMS;

QUANTUM CIRCUITS; QUANTUM DEVICES; QUANTUM DOTS GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038614674     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2003.1203175     Document Type: Article

References (22)

1. J.R. Guest, T.H. Stievater, C. Gang, E.A. Tabak, B.G. Orr, D.G. Steel, D.Gammon, and D.S. Katzer, "Near-field coherent spectroscopy and microscopy of a quantum dot system," Science, vol. 293, pp. 2224-2227, 2001.
2. E. Moreau, I. Robert, J.M. Gerald, I. Abram, L. Manin, and V. Thierry-Mieg, "Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities," Appl. Phys. Lett., vol. 79, pp. 2865-2867, 2001.
3. K. Hinzer, M. Bayer, J.P. McCaffrey, P. Hawrylak, M. Korkusinski, O. Stern, Z.R. Wasilewski, S. Fafard, and A. Forchel, "Optical spectroscopy of electronic states in a single pair of vertically coupled self-assembled quantum dots," Physica Status Solidi B-Basic Res., vol. 224, no. 2, pp. 385-392, 2001.
4. C.P. Liu, J.M. Gibson, D.G. Cahill, T.I. Kamins, D.P. Basile, and R.S. Williams, "Strain evolution in coherent Ge/Si islands," Phys. Rev. Lett., vol. 84, pp. 1958-61, 2000.
5. A. Raviswaran, C.P. Liu, J. Kim, D.G. Cahill, and J.M. Gibson, "Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)," Phys. Rev. B, vol. 63, pp. 125314, 2001.
6. T.S. Yeoh, C.P. Liu, R.B. Swint, A.E. Huber, S.D. Roh, C.Y. Woo, K.E. Lee, and J.J. Coleman, "Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition," Appl. Phys. Lett, vol. 79, pp. 221-223, 2001.
7. G.E. Cyrlin, V.N. Petrov, V.G. Dubrovskii, Y.B. Samsonenko, N.K. Polyakov, A.O. Golubok, S.A. Masalov, N.I. Komyak, V.M. Ustinov, A.Y. Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsulnikov, B.V. Volovik, A.E. Zhukov, P.S. Kopev, N.N. Ledentsov, Z.I. Alferov, and D. Bimberg, "Heteroepitaxial growth of InAs on Si: A new type of quantum dot," Fizika I Tekhnika Poluprovodnikov, vol. 33, pp. 1066-1069, 1999.
8. Y. Arakawa, "Progress in growth and physics of nitride-based quantum dots," Physica Status Solidi A, vol. 188, no. 1, pp. 37-45, 2001.
9. T.R. Ramachandran, R. Heitz, P. Chen, and A.M. Madhukar, "Mass transfer in Stranski-Krastanow growth of InAs on GaAs," Appl. Phys. Lett., vol. 70, pp. 640-642, 1996.
10. T.S. Yeoh, C.P. Liu, Y.W. Kim, and J.J. Coleman, "Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition," Mat. Res. Soc. Symp. Proc., vol. 672, pp. O8.7.5, 2001.
11. D.H. Rich, Y. Tang, A. Konkar, P. Chen, and A. Madhukar, "Polarized cathodoluminescence study of selectively grown self-assembled InAs/GaAs quantum dots," J. Appl. Phys., vol. 84, pp. 633-6344, 1998.
12. T. Ishikawa, T. Nishimura, S. Kohmoto, and K. Asakawa, "Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography," Appl. Phys. Lett., vol. 76, pp. 167-1699, 2000.
13. J. Tatebayashi, M. Nishioka, T. Someya, and Y. Arakawa, "Area-controlled growth of InAs quantum dots and improvement of density and size distribution," Appl. Phys. Lett., vol. 77, pp. 3382-3384, 2000.
14. O. Dehaese, X. Wallart, and F. Mollot, "Kinetic model of element III segregation during molecular beam epitaxy of III-III'-V semiconductor compounds," Appl. Phys. Lett., vol. 66, pp. 52-54, 1994.
15. M. Kudo and T. Mishima, "Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy," J. Appl. Phys., vol. 78, pp. 1685-1688, 1995.
16. S. Fujimoto, M. Aoki, and Y. Horikoshi, "X-ray analysis of In distribution in molecular beam epitaxy grown InGaAs/GaAs quantum well structures," Jap. J. Applied Phys. 1, Reg. Pap. Short Notes, vol. 38, pp. 1872-4, 1999.
17. M. Morgan, H. Meidia, T. Fleischmann, D.J. Norris, G.J. Rees, A.G. Cullis, and M. Hopkinson, "Indium segregation in (111)BGaAs-In/sub x/Ga/sub 1-x/As quantum wells determined by transmission electron microscopy," J. Phys. D - Appl. Phys., vol. 34, pp. 1943-1946, 2001.
18. R. Ares, C.A. Tran, and S.P. Watkins, "In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy," Appl. Phys. Lett., vol. 67, pp. 1576-1578, 1995.
19. J.A. Gupta, S.P. Watkins, E.D. Crozier, J.C. Woicik, D.A. Harrison, D.T. Jiang, I.J. Pickering, and B.A. Karlin, "Layer perfection in ultrathin InAs quantum wells in GaAs(001)," Phys. Rev. B, vol. 61, pp. 2073-2084, 2000.
20. M. Sato and Y. Horikoshi, "Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin-layer structures," J. Appl. Phys., vol. 69, pp. 7697-7702, 1991.
21. M. Sato and Y. Horikoshi, "Effect of indium replacement by gallium on InAs/GaAs quantized levels," Surface Sci., vol. 267, pp. 195-198, 1992.
22. T.S. Yeoh, R.B. Swint, A. Gaur, V.C. Elarde, and J.J. Coleman, "Selective growth of InAs quantum dots by metalorganic chemical vapor deposition," Selected Topics Quantum Electron., submitted for publication.