Hole mobility in zincblende c-GaN

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4914-4917

  Rodrigues, C G ^a   Fernandez, J R L ^b   Leite, J R ^b   Chitta, V A ^b   Freire, V N ^c   Vasconcellos, A R ^d   Luzzi, R ^d  

^a PONTIFÍCIA UNIVERSIDADE CATÓLICA DE GOIÁS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^d UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE SCATTERING; ELECTRONIC EQUIPMENT; GALLIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; IONIZATION; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; THERMODYNAMICS; THIN FILMS;

BOLTZMANN-EQUATIONS; EPITAXIAL LAYERS; IMPURITY CONCENTRATION; ZINCBLENDE FILMS;

HOLE MOBILITY;

EID: 2442625614     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690865     Document Type: Article

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