Electrical and optical properties of p-GaN films implanted with transition metal impurities

Journal of Physics Condensed Matter

Volumn 16, Issue 17, 2004, Pages 2967-2972

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Pearton, S J ^b   Zavada, J M ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; FERROMAGNETISM; IMPURITIES; ION IMPLANTATION; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PROTONS; THERMAL EFFECTS; THIN FILMS; TRANSITION METALS;

DEEP HOLE TRAPS; RADIATION DEFECTS; SPINTRONIC DEVICES;

GALLIUM NITRIDE;

EID: 2442543483     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/17/023     Document Type: Article

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