Influence of layer structure on performance of AlGaN/GaN high electron mobility transistors before and after passivation

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 436-439

  Bernat J ^a   Javorka, P ^a   Fox, A ^a   Marso, M ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); Intentionally undoped and doped structure; Passivation

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); FREQUENCIES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; PASSIVATION; SAPPHIRE; SILICON NITRIDE; SILICON WAFERS; TRANSCONDUCTANCE;

CUTOFF FREQUENCY; INTENTIONALLY UNDOPED AND DOPED STRUCTURES; LAYER STRUCTURES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2442516455     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0198-3     Document Type: Conference Paper

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